A Importância da Condição Inicial e do Pré-Condicionamento na Simulação de Dispositivos Semicondutores

Authors

  • K.F. Vaz
  • P.C.M. Machado

DOI:

https://doi.org/10.5540/tema.2004.05.01.0155

Abstract

Na simulação de dispositivos semicondutores são obtidos sistemas de equações em que as matrizes possuem dimensões elevadas, são esparsas, assimétricas e mal-condicionadas. Neste trabalho, apresentaremos como a solução desses sistemas é influenciada pelo pré-condicionamento do sistema e qual a melhor condição inicial para garantirmos uma convergência com um número menor de iterações.

References

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J.H. Ferziger, “Numerical Methods for Engineering Application”, Wiley- Interscience, New York, 1998.

J.M. Golio, “Microwave MESFETs and HEMTs”, Artech House, Boston, 1991.

H.K. Gummel, A self-consistent iterative scheme for one-dimensional steady state transistor calculations, IEEE Transaction Electron Device, 11 (1964), 455-465.

W.H. Press, S.A. Teukolsky, W.T. Vetterling e B.P. Flannery, “Numerical Recipes in Fortran”, Cambridge University Press, Cambridge, 1992.

C.M. Snowden, “Semiconductor Device Modelling”, Springer-Verlag, Londres, 1989.

K.F. Vaz, F.A.P. Osório, A.N. Borges e P.C.M. Machado, ‘Atomistic’ simulation of ultra-submicron MESFETs, Microelectronics Journal, 34 (2003), 599-602.

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Published

2004-06-01

How to Cite

Vaz, K., & Machado, P. (2004). A Importância da Condição Inicial e do Pré-Condicionamento na Simulação de Dispositivos Semicondutores. Trends in Computational and Applied Mathematics, 5(1), 155–164. https://doi.org/10.5540/tema.2004.05.01.0155

Issue

Vol. 5 No. 1 (2004)

Section

Original Article

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